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 InGaAs Photodetectors SD 060-11-41-211
Advanced Photonix, Inc.
PACKAGE DIMENSIONS INCH [mm]
O0.360 [9.14] O0.240 [6.10] 0.075 [1.90] 3X O0.018 [0.5] 1 O0.325 [8.25] 113 O0.200 [O5.08] PIN CIRCLE 2 3
CHIP
0.165 [4.19]
0.50 [12.7]
BOTTOM VIEW
CHIP DIMENSIONS INCH [mm]
0.079 [2.02]
1 ANODE 2 CASE GROUND 3 CATHODE
0.079 [2.02]
O.060 [1.5] ACTIVE AREA
TO-39 PACKAGE
FEATURES
* Low noise * Low dark current * High response
DESCRIPTION
The SD 060-11-41-211 is a InGaAs photodiode with high sensitivity and low noise characteristics packaged in a three leaded hermetic TO-39 metal package.
1.2 1 Responsivity (A/W) 0.8 0.6 0.4 0.2 0 800
APPLICATIONS
* Communication * Industrial * Medical
ABSOLUTE MAXIMUM RATING (TA)= 23C UNLESS OTHERWISE NOTED
SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -55 -40 MIN MAX 75 +100 +85 +260 UNITS V C C C
SPECTRAL RESPONSE
* 1/16 inch from case for 3 seconds max.
900
1000
1100
1200
1300
1400
1500
1600
1700
Wavelength (nM)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23C UNLESS OTHERWISE NOTED
SYMBOL ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS VR = 5V VR = 10 mV VR = 5V, f = 1 MHz Spot Scan l= 1310nm, VR = 5V I = 1A VR = 5V @ l=1310nm RL = 50 ,VR = 5V MIN 2 800 0.83 TYP 10 6 250 0.92 18 1.79X10-14 10 MAX 50 450 1700 UNITS nA MW pF nm A/W V W/ Hz nS
**Response time of 10% to 90% is specified at 1310nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. (c) 2007 Advanced Photonix, Inc. All rights reserved.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 * Phone (805) 987-0146 * Fax (805) 484-9935 * www.advancedphotonix.com
REV 6/19/07


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